Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions
It has been demonstrated that high power devices like power diodes and IGBTs (Insulated Gate Bipolar Transistors) could remain functional after cross section. This has opened a field of possibilities for the characterization of distribution of physical quantities over vertical cross-sections of power semiconductor devices. In this paper, we used the Raman spectroscopy technique to perform the mapping of temperature distribution over the cross section area of a forward biased power PIN diode.(...)
