Nitrogen doped graphene via thermal treatment of composite solid precursors as a high performance supercapacitor | 2D Research
A novel method for nitrogen doping of graphene via solid-state impregnation was developed using graphene oxide (GO) as the raw substrate and aminoterephthalic acid as the doping agent via a facile thermal treatment at 750 °C. The structure, morphology and chemical composition of the synthesised N-doped graphene were characterised using XRD, SEM, EDS and XPS. The N-graphene product exhibits homogeneous doping with high nitrogen content ([similar]6 at%) in four configurations: pyridinic-N, pyrrolic-N, pyridinic-N-oxide and graphitic-N. The electric double layer capacitor (EDLC) fabricated using an N-doped graphene electrode attained a specific capacitance of 210 F g−1 (at a current density of 1 A g−1), which was greater than the values attained by pristine graphene and a GO electrode by factors of about two and six, respectively. (...)
A novel method for nitrogen doping of graphene via solid-state impregnation was developed using graphene oxide (GO) as the raw substrate and aminoterephthalic acid as the doping agent via a facile thermal treatment at 750 °C. The structure, morphology and chemical composition of the synthesised N-doped graphene were characterised using XRD, SEM, EDS and XPS. The N-graphene product exhibits homogeneous doping with high nitrogen content ([similar]6 at%) in four configurations: pyridinic-N, pyrrolic-N, pyridinic-N-oxide and graphitic-N. The electric double layer capacitor (EDLC) fabricated using an N-doped graphene electrode attained a specific capacitance of 210 F g−1 (at a current density of 1 A g−1), which was greater than the values attained by pristine graphene and a GO electrode by factors of about two and six, respectively. (...)
